2017年会议论文
1．Fabrication of AlGaN-channel high electron mobility transistors and their application in high voltage electronic devices
第12届氮化物半导体国际会议,The European Materials Research Society,July 24-28;Strasbourg,France,薛军帅
2．A Low Power Read-Out Circuit with Frequency Accuracy of 0.2% for Capacitive and Resistive Sensors
2017 IEEE International Symposium on Circuits & Systems（ISCAS 2017）, May 28-31;Baltimore,America,汪坤
3．Frequency Dependence of Performance in Ge Negative Capacitance PFETs Achieving Sub-30 mV/decade Swing and 110 mV Hysteresis at MHz
IEEE International Electron Devices Meeting2017, Dec. 2017,周久人
4．Growth of the High Quality Single Crystalline Diamond MOSFETs with MoO3 Dielectric
11th Conference on New Diamond and Nano Carbons, May 28,任泽阳
5．Influence of the Built-in Electric Field Induced by Low Power Fluorine Plasma Implantation on the Reliability of AlGaN-GaN HEMTs
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),APR 02-06, 2017 ,杨凌
6．Hole trapping in the NBTI characteristic of SiC MOSFET
2017 International Conference on Silicon Carbide and Related Materials,Sep.17-22,Washington,America,何艳静
7．Study on NO Passivation on the Near Interface Electron and Hole Traps of N-type 4H-SiC MOS Capacitors by Ultraviolet Light
2017 International Conference on Silicon Carbide and Related Materials,Sep.17-22,Washington,America,贾一凡
8．Theoretical Investigation of Backgate-Biasing Effects on Ultrathin-Body GeSn Based Tunneling FET
IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S&E3S), IEEE Electron Device Society,Oct.15-20，San Francisco,America,王洪娟
9．Analysis of Coupling Capacitance between TSV and Adjacent RDL Interconnections
The Leading International Components, Packaging, and Manufacturing Technology Symposium,Nov.20-22,Kyoto,Japan,梅征
10．Experimental investigation of the Contact Resistance of Graphene-MoS2 interface treated with O2 Plasma
2017 the International conference on Solid State Devices and Materials,The Japan Society of Applied Physics Sep.19-22，Sendai,Japan,陆芹
11．Simulation Investigation of Strained Black Phosphorus p-n Photodetector for Middle Infrared Range
2017 the International conference on Solid State Devices and Materials,The Japan Society of Applied Physics Sep.19-22，Sendai,Japan,张思清
12．Simulation Study of The Performance Enhancement in GeSn/SiGeSn Hetero Line Tunneling FET
2017 the International conference on Solid State Devices and Materials,The Japan Society of Applied Physics Sep.19-22，Sendai,Japan,王洪娟
13．Novel Superjunction LDMOS with Multi-Floating Buried Layers
第二十九届国际功率半导体器件与集成电路研讨会（ISPSD）,The IEEE Electron Devices Society,The institute of electrical engineers of Japan May 28-June 1,Sapporo,Japan,曹震
14．Novel LDMOS with Assisted Deplete Substrate Layer Consist of Super Junction under the Drain
第二十九届国际功率半导体器件与集成电路研讨会（ISPSD）, The IEEE Electron Devices Society The institute of electrical engineers of Japan May28-June1,Sapporo,Japan,袁嵩
15．Wideband Modeling and Characterization of Coaxial-annular through-silicon via for 3-D Ics
IEEE Reliability / CPMT / ED Singapore Chapter,Dec.6-9，Singapore,梅征
16．Effective Layout Scheme of Power and Ground TSVs for More Reliable Power Delivery in 3-D Ics
IEEE Reliability / CPMT / ED Singapore Chapter , Dec.6-9,Singapore ,朱伟军
17．Investigation of the structural, anisotropic and electronic properties of β-Ga2O3 and α-Ga2O3 under pressures
The 2nd International Workshop on Gallium Oxide and Related Materials (IWGO 2017)Parma University Sep.12-15，Parma,Italy,董林鹏
18．An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs
2017国际第三代半导体论坛（IFWS）,第三代半导体产业技术创新战略联盟,Nov.1-3，Beijing,China,张恒爽
19．Impact of Proton Irradiation with Different Fluences on AC and DC Characteristics of InP/InGaAs Heterostructure
2017 International Workshop on Reliability and Radiation Effects of Micro- and Nano-Electronic Devices,中科院微电子所,May.22-24，Chendu,China,赵小红
20．Design of Wideband and High Efficiency THz Yagi Antenna by Using Air Bridge Technology
The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27，Qingdao, China,邹浩
21．Effect of reducing annealing temperature on the thermal stability of ohmic contacts to p-type 4H-SiC
The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27，Qingdao,China,唐振禹
22．Electric parameter shift of 4H-SiC junction barrier Schottky diode under repetitive dynamic avalanche conditions
The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27，Qingdao,China,唐冠男
23．Degradation Performance of 4H-SiC Power JBS Didodes under reverse voltage stress
The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27，Qingdao,China,孙秋杰
24．An innovative Si doping 3D Ni(OH)2/graphene electrode for high-performance asymmetric supercapacitor
2017 International symposium on single crystal diamond and electronics,西安交通大学,June.10-14,Xi’an,China,冯欣
25．First-principles study of the band structure and optical properties of Ga2O3
The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27，Qingdao,China,王洪娟
26．基于第一性原理对锗铅（GePb）合金能带结构的分析
第21届全国半导体物理学术会议(SPC),中国物理学会半导体物理专业委员会/中科院半导体所/南京大学 July.20-21,Nanjing.China,刘梦
27．锗沟道鳍型晶体管（FinFET）声子散射限制的电子迁移率研究
第21届全国半导体物理学术会议(SPC),中国物理学会半导体物理专业委员会/中科院半导体所/南京大学 July.20-21,Nanjing.China,敬莹
28．Revisiting Piezoelectric FETs with sub-Thermal Swing
The 5th Berkeley Symposium on Energy Efficient Electronic Systems &Steep Transistors Workshop,Oct. 19-20 2017 王洪娟
29．Simulation Study of Scaling Laws in N Polar GaN HENTs
The 8th Asia-Pacific Workshop on Widegap Semiconductors,Shandong University and Nanjing University,Sep.23-27，Qingdao,China,陈万娇
